Die bonding of silicon and other materials with active solder

@article{Peng2010DieBO,
  title={Die bonding of silicon and other materials with active solder},
  author={Cong Peng and Mingxiang Chen and S. Liu},
  journal={2010 11th International Conference on Electronic Packaging Technology & High Density Packaging},
  year={2010},
  pages={275-278}
}
  • Cong Peng, Mingxiang Chen, S. Liu
  • Published 2010
  • Materials Science
  • 2010 11th International Conference on Electronic Packaging Technology & High Density Packaging
The surfaces of optoelectronic materials such as silicon, GaAs, nitrides and oxides are known to be very difficult to bond with low melting point solders(<300°C). Small portion of active elements (3.1~4.1wt% Ti and 0.2% Ce) added into conventional SnAg solder could improve its solderability with inorganic material surfaces. In this work, some bonding experiments using active solder containing active elements were carried out. Bonding and mechanical behaviors of active solder were compared with… Expand
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References

SHOWING 1-7 OF 7 REFERENCES
Bonding nature of rare-earth-containing lead-free solders
  • 63
Rare-earth additions to lead-free electronic solders
  • 76
Properties of lead-free solder alloys with rare earth element additions
  • 519
Relationship between wettability and interfacial reaction for Sn10Ag4Ti on Al2O3 and SiC substrates
  • 35