Die backside stress modification by coating of Si<inf>3</inf>N<inf>4</inf> or AlN layers

Abstract

The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal-mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control… (More)

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Cite this paper

@article{Liao2011DieBS, title={Die backside stress modification by coating of Si3N4 or AlN layers}, author={J. Liao and Shih Hsien Liu and Y. T. Yu and Y. Lin and Guangxue Jin and G. Huang and Zhijun Fu}, journal={2011 International Symposium on Advanced Packaging Materials (APM)}, year={2011}, pages={373-377} }