Device simulations of isolation techniques for silicon microstrip detectors made on p-type substrates

@article{Piemonte2006DeviceSO,
  title={Device simulations of isolation techniques for silicon microstrip detectors made on p-type substrates},
  author={Claudio Piemonte},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={1694-1705}
}
Recent studies have shown that silicon particle detectors made on p-type substrates feature an improved radiation hardness compared to more conventional single-side n-type devices. In particular, they show an increased charge collection efficiency at very high irradiation levels. At present few devices have been fabricated on these substrates and there are still many doubts regarding the best type of isolation structure to be employed for the interruption of the inversion electron layer present… CONTINUE READING