Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device

@inproceedings{Heo2017DevicePE,
  title={Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device},
  author={Sung Yeon Heo and Jooho Lee and Seong Heon Kim and D. F. Yun and Jeong-Il Park and Kyoung Sub Kim and NamJeong Kim and Yongsung Kim and Dongwook Lee and Kyu-Sik Kim and Hee Jae Kang},
  booktitle={Scientific Reports},
  year={2017}
}
An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated. The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO. Values of x and y in SiOxNy were carefully controlled and the detector performances such as dark current and thermal stability were investigated. When the values of x and y are 0.16 and 0.66, the detector illustrates low dark current as well as… CONTINUE READING