Device and technology evolution for Si-based RF integrated circuits

  title={Device and technology evolution for Si-based RF integrated circuits},
  author={H. S. Bennett and Ralf Brederlow and J. F. Castro Costa and P. E. Cottrell and W. M. Huang and A. Immorlica and J M M{\"u}ller and Marco Racanelli and Hisashi Shichijo and C. Weitzel and Bin Zhao},
  journal={IEEE Transactions on Electron Devices},
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers, we review and give trends for the FoMs that characterize active and passive RF devices. These FoMs include transit frequency at unity current gain f/sub T/, maximum frequency of oscillation f/sub MAX/ at unit power gain, noise, breakdown voltage… CONTINUE READING
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