Device and technology evolution for Si-based RF integrated circuits

@article{Bennett2005DeviceAT,
  title={Device and technology evolution for Si-based RF integrated circuits},
  author={H. S. Bennett and Ralf Brederlow and J. F. Castro Costa and P. E. Cottrell and W. M. Huang and A. Immorlica and J M M{\"u}ller and Marco Racanelli and Hisashi Shichijo and C. Weitzel and Bin Zhao},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={1235-1258}
}
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers, we review and give trends for the FoMs that characterize active and passive RF devices. These FoMs include transit frequency at unity current gain f/sub T/, maximum frequency of oscillation f/sub MAX/ at unit power gain, noise, breakdown voltage… CONTINUE READING
Highly Cited
This paper has 77 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 58 extracted citations

78 Citations

051015'07'10'13'16
Citations per Year
Semantic Scholar estimates that this publication has 78 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.
Showing 1-10 of 160 references

A mixed-signal roadmap for the international technology roadmap for semiconductors

  • R. Brederlow, W. Weber, S. Donnay, P. Wambacq, J. Sauerer, M. Vertregt
  • IEEE Des. Test Comput., vol. 18, no. 6, pp. 34–46…
  • 2001
Highly Influential
4 Excerpts

SiGe power amplifier ICs with SWR protection for handset applications

  • J. Pusl, S. Sridharan, +5 authors M. Doherty
  • Microw. J., pp. 100–113, 2001.
  • 2001
Highly Influential
9 Excerpts

Pseudomorphic In0.52Al0.48As/ In0.7Ga0.3As HEMTs with an ultrahigh f of 562 GHz

  • Y. Yamashita, A. Endoh, +4 authors T. Mimura
  • IEEE Electron Device Lett., vol. 23, no. 12, pp…
  • 2002
Highly Influential
5 Excerpts

DC and RF performance of 0.1 m gate length Al In As-Ga In As pseudomorphic HEMTs

  • U. K. Mishra, A. S. Brown, S. E. Rosenbaum
  • IEDM Tech. Dig., 1988, pp. 180–183.
  • 1988
Highly Influential
6 Excerpts

50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

  • L. D. Nguyen, A. S. Brown, M. A. Thompson, L. M. Jelloian
  • IEEE Trans. Electron Devices, vol. 39, no. 12, pp…
  • 2007

0.18 m CMOS push-pull power amplifier with antenna in IC package

  • W. Wang, Y. Zhang
  • IEEE Microw. Wireless Components Lett., vol. 14…
  • 2004
1 Excerpt

Similar Papers

Loading similar papers…