Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application

@article{Huang2008DeviceAR,
  title={Device and reliability improvement of HfSiON+LaOx/metal gate stacks for 22nm node application},
  author={Jeff Huang and P. D. Kirsch and Dawei Heh and C. Y. Kang and Gennadi Bersuker and M. Majid Hussain and P. Majhi and Prasanna Sivasubramani and D. C. Gilmer and Nitin Goel and M. A. Quevedo-Lopez and C. D. Young and C. Pellegrini a S. Park and P. Y. Hung and Jonathan Price and H. Rusty Harris and B. H. Lee and H. Tseng and Raj Jammy},
  journal={2008 IEEE International Electron Devices Meeting},
  year={2008},
  pages={1-4}
}
For the first time, we illustrate the importance of process sequence for LaOx capped HfSiON/metal gate on performance, variability, scaling, interface quality and reliability. La diffusion to the high-k/low-k interface controls V<sub>t</sub>, as well as strongly affects mobility, N<sub>it</sub> and BTI. La diffusion is limited to the Si surface by employing SiON interface layer (IL) mitigating the issues of La-induced mobility degradation and PBTI. Improved V<sub>t</sub> tunability, reliability… CONTINUE READING