Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor

@article{Yamagata2006DeviceTF,
  title={Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor},
  author={Yasushi Yamagata and Hiroki Shirai and Hirotoshi Sugimura and S. Arai and Tomoko Wake and Ken Inoue and Takashi Sakoh and Masato Sakao and Takaho Tanigawa},
  journal={IEEE Custom Integrated Circuits Conference 2006},
  year={2006},
  pages={421-427}
}
This paper presents embedded DRAM device technology utilizing stacked MIM(metal-insulator-metal) capacitor. Targeted for high random-access performance as well as low-power data-streaming applications, original structure named "full metal DRAM" has been devised and implemented from 150nm generation. This features reduced parasitic resistance of DRAM cell… CONTINUE READING