Device Quality Polycrystalline Gallium Arsenide on Germanium/Molybdenum Substrates

  title={Device Quality Polycrystalline Gallium Arsenide on Germanium/Molybdenum Substrates},
  author={Krishna Pande and Douglas H. Reep and A. Srivastava and Sandip Tiwari and Jose M. Borrego and Sorab Khushro Ghandhi},
  journal={Journal of The Electrochemical Society},
8 Citations
Collection of electron‐beam‐generated carriers in the presence of a grain boundary or an epitaxial interface
A new technique is presented for determining the transport properties of minority carriers (the diffusion length and recombination velocity) generated when polycrystalline grains, with a grain size
Organometallics in crystal growth
Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs
A method of combining Schottky barrier electron beam induced current imaging of grain clusters with quantitative determination of diffusion length is demonstrated. This was achieved by comparing the
Metalorganic chemical vapor deposition of very thin (≂2 μm), oriented GaAs layers on tungsten substrates
This letter describes a novel technique for the deposition of very thin (≂2 μm), pinhole‐free gallium arsenide layers, with large grains (≂ 7 μ) and (110) preferred orientation, on tungsten
The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivation
This paper describes the preparation and properties of thin-film (9-µm) polycrystalline GaAs solar cells, fabricated on molybdenum substrates by the metalorganic process. These cells, of a Schottky
Evaluation of n-GaAs polycrystalline layers for solar cells using an electrochemical technique
Thin layers of n-GaAs polycrystalline material grown by metalorganic CVD have been evaluated using an electrochemical technique. The technique is based upon an analysis of the time behavior of the