Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities

@article{Piner2006DeviceDP,
  title={Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities},
  author={E. J. Piner and Sameer Singhal and Pradeep Rajagopal and R. Therrien and J. C. Roberts and Tso-Wei Li and A. W. Hanson and J. W. Johnson and I. Kizilyalli and K. J. Linthicum},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented 

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