Development of semi-insulating GaAs detectors for digital radiography

@inproceedings{Bertolucci1998DevelopmentOS,
  title={Development of semi-insulating GaAs detectors for digital radiography},
  author={Ennio Bertolucci and Ubaldo Bottigli and M. A. Ciocci and Adriano Cola and Maurizio Conti and Maria Evelina Fantacci and Nicola Romeo and P. Russo and Fabio Quaranta and Lorenzo Vasanelli},
  year={1998}
}
In this paper we present the results of an experimental study concerning different contact deposition processes on Semi-Insulating (S.I.) GaAs detectors aiming to study and optimize their performance in terms of leakage current, break-down voltage, charge collection efficiency and energy resolution when irradiated with 60 KeV photons; in particular the effect of the mesa etching treatment on the Schottky barrier side of the detectors has been studied. Such treatment certainly improves the… CONTINUE READING

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  • 1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)
  • 1998