• Corpus ID: 12718086

Development of high power quantum well lasers at RRCAT

@article{Sharma2014DevelopmentOH,
  title={Development of high power quantum well lasers at RRCAT},
  author={Tarun K. Sharma and Tapas Ganguli and Vijay Kumar Dixit and S. D. Singh and Suparna Pal and S. Porwal and Ravi Kumar and Alexander Khakha and Ravindra Jangir and Vipul Kheraj and Purnima Rawat and Ashish Kumar Nath},
  journal={arXiv: Optics},
  year={2014}
}
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider bandgap waveguide and cladding layers. The complete laser structure is grown by metal organic vapour… 

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References

SHOWING 1-5 OF 5 REFERENCES

High Power Diode Lasers

The unique features of semiconductor laser diodes open a wide field of applications. The high power capability of these devices in combination with high efficiency, small volume, a wide range of

Quantum well lasers

  • P. Zory
  • Physics, Materials Science
  • 1993
Foreword: The Origin of Quantum Wells and the Quantum Well Laser. Optical Gain in III-V Bulk and Quantum Well Semiconductors. Intraband Relaxation Effect on Optical Spectra. Multiquantum Well Lasers:

GaAs-based high power laser diodes

  • European Workshop on MOVPE, Lausanne June
  • 2005

In te ns ity (c ou nt s) Fig. 9 Longitudinal spectra of six laser diodes operating at different wavelengths

  • J. of Pure and Appl. Phys. 8,
  • 1970

Semiconductor Lasers- A Review Article

  • KIRAN,
  • 2002