Development of ferroelectric materials for memory applications

  title={Development of ferroelectric materials for memory applications},
  author={A. K. Kulkarni and Gary A. Rohrer},
  journal={Proceedings., Eighth University/Government/Industry Microelectronics Symposium},
A detailed investigation on the electrical, structural, and fatigue characteristics of thin-film ferroelectric memory devices fabricated from potassium nitrate-phase III (KNO/sub 3/-III) was conducted. This research involved: (1) fabrication and processing of 16*16 (256-bit) capacitor-type memory devices; (2) electrical characterization, i.e. pulse switching, current-voltage, capacitance -voltage, and hysteresis measurements; (3) structural characterization, i.e. inert ion sputter depth… CONTINUE READING

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Publications referenced by this paper.

Thin Films", (In Russian), Radio and Communications Publishing

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