Development of an extreme temperature range silicon carbide power module for aerospace applications

@article{Katsis2008DevelopmentOA,
  title={Development of an extreme temperature range silicon carbide power module for aerospace applications},
  author={D. Katsis and Yunqi Zheng},
  journal={2008 IEEE Power Electronics Specialists Conference},
  year={2008},
  pages={290-294}
}
A silicon carbide semiconductor power module is developed for operation at wide temperature extremes. The development of a device substrate, die-attach, interconnect system, and module DC interface is presented in this paper. Electrical and mechanical components of the package are tested and chosen for the best combination to work together as a system. This… CONTINUE READING