Development of a 557 GHz GaAs monolithic membrane-diode mixer

@article{Zhao2012DevelopmentOA,
  title={Development of a 557 GHz GaAs monolithic membrane-diode mixer},
  author={Huan Zhao and Vladimir Drakinskiy and P. Sobis and Johanna Hanning and Tomas Bryllert and A. Y. Tang and Jan Stake},
  journal={2012 International Conference on Indium Phosphide and Related Materials},
  year={2012},
  pages={102-105}
}
We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.