Development of InGaAs-Based Multiple-Junction Surface Tunnel Transistors for Multiple-Valued Logic Circuits

Abstract

Multiple negative-differential-resistance (NDR) characteristics (up to six NDRs) are demonstrated by fabricating multiple-junction surface tunnel transistors (MJ-STTs) using an InGaAs material system. The tunneling current density is 500 times larger than that for a GaAs-based MJ-STT as well as higher peak-to-valley ratios (about 5). As an application of MJ… (More)
DOI: 10.1109/ISMVL.1998.679267

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