Developer temperature effect on negative deep ultraviolet resists: Characterization, modeling, and simulation

@inproceedings{Hagouel1997DeveloperTE,
  title={Developer temperature effect on negative deep ultraviolet resists: Characterization, modeling, and simulation},
  author={Paul Isaac Hagouel and Ioannis G. Karafyllidis and Andrew R. Neureuther},
  year={1997}
}
We consider the effect of developer (solvent) temperature in the dissolution of both the exposed and unexposed parts of the resist. The spin-formatted resist film tends to have macromolecules oriented parallel to the substrate surface. The orientation of the resist macromolecules introduces an anisotropic component to the etch rate: higher in the direction parallel to the substrate surface and lower in the perpendicular one. We performed a series of experiments on resist-coated Si wafers using… CONTINUE READING

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