• Corpus ID: 252683082

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

@inproceedings{Day2022DeterministicLW,
  title={Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities},
  author={Aaron M. Day and Jonathan R. Dietz and M. Sutula and Matthew Yeh and Evelyn L. Hu},
  year={2022}
}
High-yield characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide… 

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References

SHOWING 1-10 OF 29 REFERENCES

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing

It is shown that prolonged laser irradiation and thermal annealing can enhance the defect–cavity coupling of VSi− defects embedded in silicon carbide optical cavities, providing important insights to researchers seeking to optimize cavity coupling to such defects, affording greater optical outputs, clearer spin signatures, and control of the integrated qubits.

Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures

Direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and <50‬nm positioning accuracy relative to a nanocavity is demonstrated.

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Waveguide-integrated V Si centres in SiC maintain spin-optical coherences, enabling nuclear high-fidelity spin qubit operations, which is a crucial step towards fault-tolerant quantum information distribution based on cavity quantum electrodynamics.

Purcell enhancement of a single silicon carbide color center with coherent spin control.

This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

A significant enhancement of point-defect emission in silicon carbide is reported, which hosts a suite of intriguing spin-active defects and how the cavity coupling can potentially allow access to a variety of information about the defects and their environment is demonstrated.

Optical and strain stabilization of point defects in silicon carbide

The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing

Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics

Hybrid spin–mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the

Visible and Infrared Photoluminescence in Hexagonal Silicon Carbide by Direct Femtosecond Laser Writing

Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide and it is shown that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm.

A silicon carbide room-temperature single-photon source.

The identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC), composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC.

Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam

Precise generation of spin defects in solid-state systems is essential for nano-structure fluorescence enhancement. We investigated a method for creating single silicon vacancy defect arrays in