Determination of the electronics transfer function for current transient measurements

@article{Scharf2014DeterminationOT,
  title={Determination of the electronics transfer function for current transient measurements},
  author={Christian Scharf and Robert Klanner},
  journal={Nuclear Instruments \& Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment},
  year={2014},
  volume={779},
  pages={1-5}
}
  • C. ScharfR. Klanner
  • Published 10 July 2014
  • Physics
  • Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
View PDF on arXiv
11 Citations
Background Citations
4
Methods Citations
3

Figures from this paper

11 Citations

Precision measurement of the carrier drift velocities in ⟨100⟩ silicon

Measurements of the drift velocities of electrons and holes as functions of electric field strength and temperature in high-purity n- and p-type silicon with ⟨100⟩ crystal orientation are presented.…

Edge-TCT for the Investigation of Radiation Damaged Silicon Strip Sensors

The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and…

Edge-TCT for the Investigation of

The edge Transient Current Technique (TCT) is a method for the investigation of silicon sensors. This method requires infrared light from a sub-ns pulsed laser to be focused to a μm-size spot and…

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 µ m thick n-type silicon sensors are irradiated with protons of different…

Trapping in irradiated p-onn silicon sensors at fluences anticipated at the HL-LHC outer tracker Tracker group of the CMS Collaboration

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 μm thick n-type silicon sensors are irradiated with protons of different…

Trapping in proton irradiated p+-n-n+ silicon sensors at fluences anticipated at the HL-LHC outer tracker

The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 μm thick n-type silicon sensors are irradiated with protons of different…

Measurement of the drift velocities of electrons and holes in high-ohmic 〈100〉 silicon

Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the…

Radiation damage of highly irradiated silicon sensors

Die heutige Elementarteilchenphysik verlangt nach einer bestandigen Erhohung der Luminositat von Teilchenbeschleunigern um seltene Ereignisse zu untersuchen. Die Anforderungen an die…

References

SHOWING 1-10 OF 17 REFERENCES

Signal development in irradiated silicon detectors

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give…

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

Investigation of Irradiated Silicon Detectors by Edge-TCT

A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated and irradiated p-type silicon micro-strip…

The plasma effect in silicon semiconductor radiation detectors

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of a

Study of anomalous charge collection efficiency in heavily irradiated silicon strip detectors

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of<111>and<100>crystal orientation at high electric fields

Measurement of the drift velocities of electrons and holes in high-ohmic 〈100〉 silicon

Simulation and experimental study of plasma effects in planar silicon sensors