Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs

@article{Wang1999DeterminationOB,
  title={Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs},
  author={D. Wang and K. Wang and K. F. Huang and T. C. Huang and A. Chu},
  journal={Applied Physics Letters},
  year={1999},
  volume={74},
  pages={475-477}
}
Photoreflectance spectroscopy of surface-intrinsic n+-doped (s-i-n+) GaAs has been measured at various power densities (Ppu) of a pump beam. Many Franz–Keldysh oscillations (FKOs) were observed above the band-gap energy, which will enable the electric-field strength (F) to be determined from the periods of the FKOs. Field F thus obtained is subject to photovoltaic effects. In order to reduce the photovoltaic effects from the pump beam, Ppu was kept below 10 μW/cm2 in the previous experiments… Expand
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References

SHOWING 1-10 OF 12 REFERENCES
Handbook on semiconductors
...
1
2
...