Detection of trap generation in high-k gate stacks


Constant voltage stress (CVS) combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO<sub>2 </sub>/HfO<sub>2</sub>/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects… (More)


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