Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-$\kappa$ Gated MOS Devices

@article{Lu2007DetectionOB,
  title={Detection of Border Trap Density and Energy Distribution Along the Gate Dielectric Bulk of High-\$\kappa\$ Gated MOS Devices},
  author={Chun-Yuan Lu and Kuei-Shu Chang-Liao and Chun-Chang Lu and Ping-Hung Tsai and Tien-Ko Wang},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={432-435}
}
A novel charge-pumping (CP) technique is demonstrated to extract border-trap distribution for high- kappa gated MOSFETs. The varying-frequency CP method is shown to be more effective than the varying-amplitude one for probing border traps and extending the tunneling depth. A linear relationship of the Qcp versus ln(T rTf)1/2 plot can only be maintained at the CP frequency of 1 MHz, while not below 1 MHz, due to the influence of border traps near HfOxNy/Si interface. The proposed technique… CONTINUE READING