Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

@article{Suehle2005DetailedSA,
  title={Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides},
  author={John S. Suehle and Baozhong Zhu and Yuan Chen and Joseph B. Bernstein},
  journal={Microelectronics Reliability},
  year={2005},
  volume={45},
  pages={419-426}
}
Abstract The mechanism responsible for post-soft breakdown leakage current increase in ultra-thin oxides depends on the nature of the conducting filament formed at the instant of dielectric breakdown. The conductance of the filament formed during soft breakdown has been observed to be either stable until hard breakdown occurs or to increase continually with time. The acceleration factors for predicting hard breakdown are different in each case. Recent experimental results suggest that the… CONTINUE READING

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SHOWING 1-10 OF 19 REFERENCES

Growth and scaling of oxide conduction after breakdown

  • 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
  • 2003
VIEW 3 EXCERPTS
HIGHLY INFLUENTIAL

A thorough investigation of progressive 426 J.S

F Monsieur, E Vincent, +3 authors G. Pananakakis
  • Suehle et al. / Microelectronics Reliability
  • 2005
VIEW 1 EXCERPT

Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters

  • 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.
  • 2003