Designer germanium quantum dot phototransistor for near infrared optical detection and amplification

@article{Kuo2014DesignerGQ,
  title={Designer germanium quantum dot phototransistor for near infrared optical detection and amplification},
  author={Ming-Hao Kuo and Wei-Ting Lai and Tzyy-Min Hsu and Pei-wen Li},
  journal={2014 Silicon Nanoelectronics Workshop (SNW)},
  year={2014},
  pages={1-2}
}
We demonstrated a novel CMOS approach for the fabrication of high-performance germanium quantum dot (QD) phototransistor (PT) offering great promises as optical switches and transducers for Si-based optical interconnects. Illumination produces significant enhancement in the drain current of Ge QD PTs when biased at both on-and off-states, primarily resulting from photoconductive and photovoltaic effects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge… CONTINUE READING

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