Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions.

@article{Christesen2012DesignPF,
  title={Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions.},
  author={Joseph D Christesen and Xing Zhang and Christopher W. Pinion and Thomas A Celano and Cory James Flynn and James F Cahoon},
  journal={Nano letters},
  year={2012},
  volume={12 11},
  pages={
          6024-9
        }
}
Semiconductor nanowires (NWs) are a developing platform for electronic and photonic technologies, and many demonstrated devices utilize a p-type/n-type (p-n) junction encoded along either the axial or radial directions of the wires. These miniaturized junctions enable a diverse range of functions, from sensors to solar cells, yet the physics of the devices has not been thoroughly evaluated. Here, we present finite-element modeling of axial and radial Si NW p-n junctions with total diameters of… CONTINUE READING
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