Design optimization of AlInAs-GalnAs HEMTs for low-noise applications

@article{Mateos2004DesignOO,
  title={Design optimization of AlInAs-GalnAs HEMTs for low-noise applications},
  author={Javier Mateos and Tom{\'a}s Gonz{\'a}lez and Daniel Pardo and S. Bollaert and T. Parenty and Alain Cappy},
  journal={IEEE Transactions on Electron Devices},
  year={2004},
  volume={51},
  pages={1228-1233}
}
In order to optimize the low-noise performance of 50-nm-gate AlInAs-GalnAs high-electron mobility transistors (HEMTs), by using an ensemble Monte Carlo simulation we study the influence of three important technological parameters on their noise level: the doping of the /spl delta/-doped layer, the width of the devices and the length of the recess. The noise behavior of the devices is firstly analyzed in terms of the physics-based P, R, and C parameters, and then characterized from a practical… CONTINUE READING
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