Design of ion-implanted MOSFET's with very small physical dimensions

  title={Design of ion-implanted MOSFET's with very small physical dimensions},
  author={Robert H. Dennard and Fritz H. Gaensslen and Hwa Nien Yu and V. LEO RIDEOVT and Ernest Bassous and A. LeBlanc},
  journal={IEEE Solid-State Circuits Newsletter},
This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1μ. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to proVide shallow source and drain regions and a nonuniform substrate doping profile. Onedimensional models are used to predict the substrate… Expand
A survey of approaches for implementing optical neural networks
This work mainly focuses on the mathematical operations that are decomposed from theoretical models of ANNs and their corresponding optical implementations; these include matrix multiplication, nonlinear activation, convolution, and learning algorithms realized via optical approaches. Expand
A survey of leakage reduction techniques in CMOS digital circuits for nanoscale regime
  • Vijay Kumar Sharma
  • Computer Science
  • Australian Journal of Electrical and Electronics Engineering
  • 2021
The battery-driven portable systems are the lifeline of the modern era. Very large-scale integration (VLSI) designers are continuously working to enhance the performance of the portable systems. Th...
Advancement and challenges in MOSFET scaling
Abstract In this study, we enlighten about the field effect transistors (FET) and their technologies. As far as very large integration is concerned, researchers are continuously focusing on scalingExpand
Electrodiffusion Phenomena in Neuroscience and the Nernst–Planck–Poisson Equations
This work is aimed to give an electrochemical insight into the ionic transport phenomena in the cellular environment of organized brain tissue. The Nernst–Planck–Poisson (NPP) model is presented, andExpand
Evaluating the use of graphene electrodes in sub-micrometric, high-frequency n-type organic transistors
Abstract In this work we report on fully operational sub-micrometric low voltage OFETs by using graphene as the source-drain electrodes pair and a high- κ ultra-thin dielectric in a local gateExpand
Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures
  • Wenbo Zhao, Jieun Kim, +10 authors Lane W. Martin
  • Materials Science
  • Advanced Functional Materials
  • 2021
Impact of Pocket Doping On the Performance of Planar SOI Junctionless Transistor
In this paper, a novel sturcture of planar Silicon on Insulator Junctionless transistor is proposed with improved I ON /I OFF ratio, Short Channel effects (SCEs) and most importantly, it isExpand
Impact of lateral straggle on linearity performance in gate-modulated (GM) TFET
Tunnel field effect transistor (TFET) is considered as a more viable device than MOSFET for low power applications. However, the performance of any device depends on the accuracy of the fabricationExpand
Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET
TFET is very favourable device than MOSFET in terms of low power design and applications. The accurate fabrication of device results in satisfactory electrical characteristics. The diffusion ofExpand
Recent developments in the general atomic and molecular electronic structure system.
A discussion of many of the recently implemented features of GAMESS (General Atomic and Molecular Electronic Structure System) and LibCChem (the C++ CPU/GPU library associated with GAMESS) is presented, which include fragmentation methods, hybrid MPI/OpenMP approaches to Hartree-Fock, and resolution of the identity second order perturbation theory. Expand


Design and characteristics of n-channel insulated-gate field-effect transistors
Designs and characteristics of experimental devices of 500 and 1000 A gate insulator thicknesses are presented, with particular attention to the effects of source-drain spacing. Expand
A high-speed p-channel random access 1024-bit memory made with electron lithography
A switched capacitor, p-channel, 1024-- bit random access memory has been made with electron lithography. The circuit was the same as that described by Boll and Lynch (IEDM, 1972) but with halvedExpand
A two-dimensional mathematical model of the insulated-gate field-effect transistor
Abstract This paper is concerned with the mathematical details of a numerical model of the insulated-gate field-effect transistor; a computer-aided analysis of the device, based on this model,Expand
An analysis of the threshold voltage for short-channel IGFET's
Abstract For short-channel insulated-gate field-effect transistors (IGFET) operating with source-to-substrate reverse bias, the threshold voltage is in general a function of channel length andExpand
Electron-Beam Fabrication of Ion Implanted High-Performance FET Circuits
This paper describes the design, fabrication and test results of a high-performance IGFET circuit made by combining electron-beam technology for all masking steps and ion implantation for theExpand
Steady state mathematical theory for the insulated gate field effect transistor
A modified one-dimensional mathematical theory is proposed, to account for mechanisms of operation for an insulated gate field effect transistor (IGFET), that is in adequate agreement with a rigorous two-dimensional computer solution for this semiconductor problem. Expand
Subthreshold design considerations for insulated gate field-effect transistors
A knowledge of subthreshold behavior in an insulated gate field-effect transistor is important for circuits with low leakage specifications. This paper discusses the effect of drain voltage on theExpand
Cathodoluminescence assessment of GaAs1−x Px for light emitting diodes
The room temperature cathodoluminescence (CL) properties of selenium doped epitaxial layers of GaAs1−xPx, in the composition range 0·35 < x < 0.45, have been examined as a function of the HallExpand