Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Abstract

An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce… (More)
DOI: 10.1109/GCCE.2014.7031172

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