Design of a wideband 1.5GHz to 3GHz class EF2 power amplifier

@article{Madureira2014DesignOA,
  title={Design of a wideband 1.5GHz to 3GHz class EF2 power amplifier},
  author={Heider M. G. Madureira and Nathalie Deltimple and Sandro A. P. Haddad and Didier Belot and Eric Kerherve},
  journal={2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)},
  year={2014},
  pages={173-176}
}
A class EF2 power amplifier with 32.7dB power gain is presented. To the authors' knowledge, this class has never been presented in PA design in RF frequency. The class EF2 power amplifier presents lower voltage stress than its class E counterpart due to waveform engineering. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20dBm RF output power from a 2V supply voltage with 55% drain efficiency and 49.8% PAE at 2.5GHz. The output power… CONTINUE READING

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Key Quantitative Results

  • The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20dBm RF output power from a 2V supply voltage with 55% drain efficiency and 49.8% PAE at 2.5GHz.

Citations

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CMOS RF Power Amplifier design for wideband frequency

  • 2016 International Conference on Automatic Control and Dynamic Optimization Techniques (ICACDOT)
  • 2016
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