Pulsed-laser testing for single event effects in a stand-alone resistive random access memory
This paper proposes a design methodology for a digital library of cells resistant to cosmic radiation. Most important effects due to radiation are avoided or mitigated using ad hoc design techniques. Fault injection techniques are used to validate the design. Simulations results demonstrate that the cells designed in a 180 nm CMOS technology are tolerant to 1.5 mA current peak due to interaction with a single high-energy particle.