Design of a hybrid non-volatile SRAM cell for concurrent SEU detection and correction

Abstract

This paper presents a hybrid non-volatile (NV) SRAM cell with a new scheme for soft error tolerance. The proposed cell consists of a 6T SRAM core, a Resistive RAM made of a transistor and a Programmable Metallization Cell. An additional transistor and a transmission gate are utilized for selecting a memory cell in the NVSRAM array. Concurrent error detection (CED) and correction capabilities are provided by connecting the NVSRAM array with a dual-rail checker; CED is accomplished using a dual-rail checker, while correction is accomplished by utilizing the restore operation, such that data from the non-volatile memory element is copied back to the SRAM core. The simulation results show that the proposed scheme is very efficient in terms of numerous figures of merit.

DOI: 10.1016/j.vlsi.2015.09.005

Cite this paper

@article{Junsangsri2016DesignOA, title={Design of a hybrid non-volatile SRAM cell for concurrent SEU detection and correction}, author={Pilin Junsangsri and Jie Han and Fabrizio Lombardi}, journal={Integration}, year={2016}, volume={52}, pages={156-167} }