Design of a Low Power Radiation Hardened 256K SRAM

@article{Haixia2006DesignOA,
  title={Design of a Low Power Radiation Hardened 256K SRAM},
  author={Li Haixia and Li Weimin and Tan Jianping and Lu Shijin and Chen Lei},
  journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings},
  year={2006},
  pages={1646-1648}
}
In this paper a low power radiation hardened 256K SRAM is presented. The dual interlocked storage cell (DICE) and radiation hardened layout techniques have been implemented to achieve radiation hardened. A novel sense amplifier has been proposed and modified self-timing scheme with duplicate cell for low power operation has been adopted in this SRAM. It has… CONTINUE READING