Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor

@article{Modzelewski2008DesignOA,
  title={Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor},
  author={K. Modzelewski and R. Chintala and H. Moolamalla and S. Parke and Douglas Hackler},
  journal={2008 17th Biennial University/Government/Industry Micro/Nano Symposium},
  year={2008},
  pages={64-67}
}
Considerable recent research has focused on developing vertical FinFET-type double-gated CMOS devices. Planar independently-double-gated FlexFET CMOS transistors have recently been reported, exhibiting strong dynamic threshold voltage control. The FlexFET device design utilizes a mid-gap metal top gate self-aligned to an implanted JFET bottom gate. A simple analytical dynamic threshold model is developed in this work and verified by extensive device simulation. Optimization of the top gate… CONTINUE READING
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