Design of Robust SRAM Cells Against Single-Event Multiple Effects for Nanometer Technologies

@article{Rajaei2015DesignOR,
  title={Design of Robust SRAM Cells Against Single-Event Multiple Effects for Nanometer Technologies},
  author={Ramin Rajaei and Bahar Asgari and Mahmoud Tabandeh and Mahdi Fazeli},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2015},
  volume={15},
  pages={429-436}
}
As technology size scales down toward lower two-digit nanometer dimensions, sensitivity of CMOS circuits to radiation effects increases. Static random access memory cells (SRAMs) that are mostly employed as high-performance and high-density memory cells are prone to radiation-induced single-event upsets. Therefore, designing reliable SRAM cells has always been a serious challenge. In this paper, we propose two novel SRAM cells, namely, RHD11 and RHD13, that provide more attractive features than… CONTINUE READING

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