Design of Microwave GaAs MESFET ’ S for Broad-Band Low-Noise Amplifiers

@inproceedings{Fukui1998DesignOM,
  title={Design of Microwave GaAs MESFET ’ S for Broad-Band Low-Noise Amplifiers},
  author={H. Fukui},
  year={1998}
}
As a basis for designing GSAS MESFET’S for broad-band low-noise mnpfMe~ tbe fundarnentaf relationships between basic device parmnete~ sod two-port noise parameters are investigated in a semiempfrfcaf manner. A set of four noise parameters are shown as sfmple functfons of equivalent circuit elements of a GaAs MESFET. Each element fs then expressed in a simple anafytfcai form with the geometrical and material parameters of this device. Thus practical expressions for the four noise parameters are… CONTINUE READING
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