Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

  title={Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High \$f_\{\max\}\$},
  author={D. J. Denninghoff and Sambarta Dasgupta and Jing Lu and Stacia Keller and U. K. Mishra},
  journal={IEEE Electron Device Letters},
This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency (fmax). A 351-GHz fmax is demonstrated, which is the highest published to date for an N-polar GaN HEMT. Novel 80-nm-long 1.1-m-tall T-gates with a 370-nm-tall stem were used to simultaneously minimize gate resistance (Rg) and parasitic gate-drain… CONTINUE READING


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Publications referenced by this paper.
Showing 1-10 of 13 references

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

2011 International Electron Devices Meeting • 2011
View 6 Excerpts
Highly Influenced

220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic

2010 International Electron Devices Meeting • 2010
View 6 Excerpts
Highly Influenced

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

IEEE Electron Device Letters • 2011
View 1 Excerpt

Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

S. Dasgupta, Nidhi, +4 authors U. K. Mishra
Appl. Phys. Lett., vol. 96, no. 14, pp. 143 504-1–143 504-3, Apr. 2010. • 2010
View 1 Excerpt

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