Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

@article{Denninghoff2012DesignOH,
  title={Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High \$f_\{\max\}\$},
  author={D. J. Denninghoff and Sambarta Dasgupta and Jing Lu and Stacia Keller and U. K. Mishra},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={785-787}
}
This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency (fmax). A 351-GHz fmax is demonstrated, which is the highest published to date for an N-polar GaN HEMT. Novel 80-nm-long 1.1-m-tall T-gates with a 370-nm-tall stem were used to simultaneously minimize gate resistance (Rg) and parasitic gate-drain… CONTINUE READING

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