Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec

Abstract

449 Abstract— We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub… (More)
DOI: 10.6109/jicce.2010.8.4.449

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