Design of 2.1GHz RF CMOS Power Amplifier for 3G

@article{Yu2009DesignO2,
  title={Design of 2.1GHz RF CMOS Power Amplifier for 3G},
  author={Fada Yu and Enling Li and Ying Xue and Xue Lin Wang and Yongxia Yuan},
  journal={2009 International Conference on Networks Security, Wireless Communications and Trusted Computing},
  year={2009},
  volume={2},
  pages={741-743}
}
In the radio frequency (RF) transceiver system, the integration of CMOS power amplifier (PA) remains to be a challenge. In this paper, a PA module is designed, which can be used for 3G mobile communications. A single-ended two-stage Class AB PA is adopted for its higher power efficiency and better linearity. The circuit is simulated by Cadence SpectreS in TSMC 0.25μm CMOS process. As shown by the simulation results: at 2.1GHz under 2.5V, the output power is 1W (30.1dBm) while input power signal… CONTINUE READING

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