Design considerations of STCB OTA in CMOS 65nm with large capacitive loads

Abstract

A modified structure of OTA in CMOS 65-nm with signal- and transient-current boosting is presented in this paper. The structure uses simple cascode current mirrors to overcome channel-modulation effect of the 65-nm MOSFETs and to maintain low-error current matching. Simulations show that the parasitic poles of the OTA in CMOS 65-nm are located at very high… (More)
DOI: 10.1109/ISCAS.2015.7169184

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