Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

@article{Schoen1998DesignCA,
  title={Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers},
  author={K. P. Schoen and J. Woodall and J. Cooper and M. Melloch},
  journal={IEEE Transactions on Electron Devices},
  year={1998},
  volume={45},
  pages={1595-1604}
}
Practical design of high-voltage SiC Schottky rectifiers requires an understanding of the device physics that affect the key performance parameters. Forward characteristics of SiC Schottky rectifiers follow thermionic emission theory and are relatively well understood. However, the reverse characteristics are not well understood and have not been experimentally investigated in-depth. In this paper we report the analysis and experimental results of both the forward and reverse characteristics of… Expand
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