Design and results of W-band power detectors in a 130 nm SiGe BiCMOS process technology

Abstract

This paper presents two SiGe power detector circuit designs intended for W-band passive imaging systems. The power detectors were designed in a 130 nm SiGe BiCMOS technology with f<sub>T</sub>/f<sub>max</sub> of 300 GHz/500 GHz. The initial detector design exhibits a measured peak responsivity of 80 kV/W and an estimated Noise Equivalent Power (NEP) of 0.4… (More)

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@article{Jonsson2014DesignAR, title={Design and results of W-band power detectors in a 130 nm SiGe BiCMOS process technology}, author={Rickard M. Jonsson and Robert Malmqvist and Shakila B. Reyaz and A. Rydberg and M. Kaynak}, journal={2014 9th European Microwave Integrated Circuit Conference}, year={2014}, pages={289-292} }