Design and modeling method of package for power GaN HEMTs to limit the input matching sensitivity

Abstract

This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.

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Cite this paper

@article{Cheron2011DesignAM, title={Design and modeling method of package for power GaN HEMTs to limit the input matching sensitivity}, author={Jerome Cheron and Michel Campovecchio and Denis Barataud and Tibault Reveyrand and S . Mons and M. Stanislawiak and Philippe Eudeline and D. Floriot and W. Demenitroux}, journal={2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits}, year={2011}, pages={1-4} }