Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-gb/s applications

Abstract

This letter demonstrates an evanescently coupled p-i-n photodiode combined with a multimode diluted waveguide using a simple all 2-in InP processing that includes on-wafer mirrors etching and antireflection coating. A high responsivity of 0.81 A/W at 1.55 mum with less than 0.4-dB polarization dependence and a large -1-dB vertical alignment tolerance of 2… (More)

5 Figures and Tables

Cite this paper

@article{Achouche2006DesignAF, title={Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-gb/s applications}, author={Mohand Achouche and Vincent Magnin and Joseph Harari and Daniele Carpentier and Estelle Derouin and Christophe Jany and D. Decoster}, journal={IEEE Photonics Technology Letters}, year={2006}, volume={18}, pages={556-558} }