Design and characterization of a wideband high-dynamic range SiGe cryogenic low noise amplifier

@article{Wong2017DesignAC,
  title={Design and characterization of a wideband high-dynamic range SiGe cryogenic low noise amplifier},
  author={Wei-Ting Wong and Ahmet Hakan Coskun and Joseph C. Bardin},
  journal={2017 IEEE MTT-S International Microwave Symposium (IMS)},
  year={2017},
  pages={1972-1975}
}
The design and characterization of a cryogenic SiGe HBT low-noise amplifier optimized for high dynamic range is presented. The design leverages cryogenic SiGe HBT models capable of simultaneously describing weak nonlinearity, noise, and small-signal performance. The integrated circuit was realized in the Global Foundries 0.12 μm BiCMOS 8HP technology platform and operates from 1–20 GHz. When biased at a power consumption of 60 mW and operated at a physical temperature of 17 K, the amplifier… CONTINUE READING