Design and Simulation of Asymmetric MOSFETs

Abstract

A novel asymmetric MOSFET with no LDD on the source side is simulated on bulk-Si using a device simulator (SILVACO). In order to overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using mesa structure and sidewall spacer gate is proposed which provides self-alignment process, aggressive scaling, and uniformity. First of… (More)
DOI: 10.1093/ietele/e90-c.5.978

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