Leakage Current and Electron Barrier Height of Thin Tunnel Oxide Grown on a CF_4 Pretreated Wafer
- Liu Ti, Ou Wen
- Chinese Journal of Semiconductors. 26(7),
It is easy to make mistakes in multilevel flash memories than traditional flash memories, due to the reduced spacing between adjacent threshold voltage, reliability issues turn out to be more critical in multilevel flash memories. But, actual correction only can correct one bit error in flash memory, it cann't meet the need of multilevel flash memory. This paper present a new correction circuitry which use the error correction code, the correction ability of it is improved, thereby the reliability of multilevel flash is increased.