Design and Evaluation of a Hybrid Memory Cell by Single-Electron Transfer

@article{Wei2013DesignAE,
  title={Design and Evaluation of a Hybrid Memory Cell by Single-Electron Transfer},
  author={Wei Wei and Jie Han and Fabrizio Lombardi},
  journal={IEEE Transactions on Nanotechnology},
  year={2013},
  volume={12},
  pages={57-70}
}
This paper presents the characterization and design of a static random access memory (SRAM) cell at nanoscale ranges. The proposed SRAM cell incorporates a single-electron (SE) turnstile and an SE transistor/MOS circuit in its operation, hence the hybrid nature. Differently from previous cells, the hybrid circuit is utilized to sense (measure) on a voltage basis the presence of at least an electron as stored in memory, while the turnstile enables the SE transfer in and out of the storage node… CONTINUE READING