Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor

@article{Wang2009DesignAC,
  title={Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor},
  author={Jun Wang and A. Q. Huang},
  journal={IEEE Transactions on Power Electronics},
  year={2009},
  volume={24},
  pages={1189-1197}
}
A novel MOS-controlled silicon carbide (SiC) thyristor device, the SiC emitter turn-off thyristor (ETO), as a promising technology for future high-voltage and high-frequency switching applications has been developed. The world's first 4.5-kV SiC p-type ETO prototype based on a 0.36 cm2 SiC p-type gate turn-off (GTO) shows a forward voltage drop of 4.6 V at a current density of 25 A/cm2 and a turn-off energy loss of 9.88 mJ. The low loss shows that the SiC ETO could operate at a 4-kHz frequency… CONTINUE READING
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