Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

@article{Gaillardon2013DesignAA,
  title={Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs},
  author={Pierre-Emmanuel Gaillardon and Davide Sacchetto and Giovanni Betti Beneventi and M. Haykel Ben Jamaa and Luca Perniola and Fabien Clermidy and Ian O'Connor and Giovanni De Micheli},
  journal={IEEE Transactions on Nanotechnology},
  year={2013},
  volume={12},
  pages={40-50}
}
Emerging nonvolatile memories (eNVMs) such as phase-change random access memories (PCRAMs) or oxide-based resistive random access memories (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of building blocks for field-programmable gate arrays (FPGAs) using eNVMs. We propose an eNVM-based configuration point, a look-up table structure with reduced programming complexity and a high-performance switchbox… CONTINUE READING
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