Design and Analysis of STTRAM-Based Ternary Content Addressable Memory Cell

@article{Govindaraj2017DesignAA,
  title={Design and Analysis of STTRAM-Based Ternary Content Addressable Memory Cell},
  author={Rekha Govindaraj and Swaroop Ghosh},
  journal={JETC},
  year={2017},
  volume={13},
  pages={52:1-52:22}
}
Content Addressable Memory (CAM) is widely used in applications where searching a specific pattern of data is a major operation. Conventional CAMs suffer from area, power, and speed limitations. We propose Spin-Torque Transfer RAM--based Ternary CAM (TCAM) cells. The proposed NOR-type TCAM cell has a 62.5% (33%) reduction in number of transistor compared to conventional CMOS TCAMs (spintronic TCAMs). We analyzed the sense margin of the proposed TCAM with respect to 16-, 32-, 64-, 128-, and 256… CONTINUE READING

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-6 of 6 references

Effect of film roughness in MgO-based magnetic tunnel junctions

  • W. Shen, D. Mazumdar, X. Zou, X. Liu, B. D. Schrag, G. Xiao.
  • Appl. Phys. Lett. 88, 18 (2006), 182508.
  • 2006
Highly Influential
4 Excerpts

Similar Papers

Loading similar papers…