Design and Analysis of STTRAM-Based Ternary Content Addressable Memory Cell

  title={Design and Analysis of STTRAM-Based Ternary Content Addressable Memory Cell},
  author={Rekha Govindaraj and Swaroop Ghosh},
Content Addressable Memory (CAM) is widely used in applications where searching a specific pattern of data is a major operation. Conventional CAMs suffer from area, power, and speed limitations. We propose Spin-Torque Transfer RAM--based Ternary CAM (TCAM) cells. The proposed NOR-type TCAM cell has a 62.5% (33%) reduction in number of transistor compared to conventional CMOS TCAMs (spintronic TCAMs). We analyzed the sense margin of the proposed TCAM with respect to 16-, 32-, 64-, 128-, and 256… CONTINUE READING


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