Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells

@article{Silver2000DesignAA,
  title={Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells},
  author={Melanie Silver and Alana V. Phillips and A. R. Adams and P. Greene and A. Collar},
  journal={IEEE Journal of Quantum Electronics},
  year={2000},
  volume={36},
  pages={118-122}
}
The polarization dependence of 1550-nm semiconductor optical amplifiers (SOA's) containing tensile and compressive wells has been investigated both theoretically and experimentally. Our model to predict the polarization-resolved (TE and TM) gain spectra of these structures has been confirmed by amplified spontaneous emission measurements. It is found that there can be appreciable carrier redistribution between the two types of wells when the tensile layers have the large thickness (greater than… CONTINUE READING

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References

Publications referenced by this paper.
Showing 1-10 of 10 references

T

  • L. F. Tiemeijer, P.J.A. Thijs
  • van Dongen, R. W. M. Slootweg, J. M. M. van der…
  • 1993
Highly Influential
4 Excerpts

Optimization of long wavelength InGaAsP strained quantum well lasers,

  • M. Silver, E. P. O’Reilly
  • IEEE J. Quantum Electron. ,
  • 1995
Highly Influential
3 Excerpts

Gain and radiative current density in In- GaAs–InGaAsP lasers with electrostatically confined electron states,

  • M. Silver, E. P. O’Reilly
  • IEEE J. Quantum Electron. ,
  • 1994
1 Excerpt

1 . 5 μ m multi - quantum - well semiconductor optical amplifier with tensile and compressively strained wells for polarization - independent gain

  • B. I. Miller, U. Koren, M. G. Young, M. Chien, R. M. Jopson, C. A. Burrus
  • IEEE Photon . Technol . Lett .
  • 1993

Polariza - tion - insensitive multiple quantum well laser amplifiers for the 1300 nm window

  • P. J. A. Thijs L. F. Tiemeijer, T. van Dongen, R. W. M. Slootweg
  • 1993

and C

  • M. A. Newkirk, B. I. Miller, U. Koren, M. G. Young, M. Chien, R. M. Jopson
  • A. Burrus, “1.5 μm multi-quantum-well…
  • 1993
3 Excerpts

and J

  • W. X. Zou, Z. M. Chaung, K.-K. Lax, N. Dagli, L. A. Coldren
  • L. Merz, “Analysis and optimization of graded…
  • 1991

and I

  • M. J. Adams, J. V. Collins
  • D. Henning, “Analysis of semiconductor laser…
  • 1985
1 Excerpt

Electron theory of the optical properties of laser excited semiconductors

  • Z. M. Chaung W. X. Zou, K.-K. Lax, N. Dagli, L. A. Coldren, J. L. Merz
  • Prog . Quantum Electron .
  • 1984

Schmitt-Rink, “Electron theory of the optical properties of laser excited semiconductors,

  • S. H. Haug
  • Prog. Quantum Electron. ,
  • 1984

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